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ChemInform Abstract: Li2CdGeS4, a Diamond‐Like Semiconductor with Strong Second‐Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold.

Identifieur interne : 004B58 ( Main/Exploration ); précédent : 004B57; suivant : 004B59

ChemInform Abstract: Li2CdGeS4, a Diamond‐Like Semiconductor with Strong Second‐Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold.

Auteurs : Jacilynn A. Brant [États-Unis] ; Daniel J. Clark [États-Unis] ; Yong Soo Kim [États-Unis] ; Joon I. Jang [États-Unis] ; Jian-Han Zhang [États-Unis] ; Jennifer A. Aitken [États-Unis]

Source :

ChemInform [ 0931-7597 ] ; 2014-08-19.

RBID : ISTEX:A6586C7FFE668E3B24F899B8A4DEB1B3906E9A62

Abstract

The NLO semiconductor of title is quantitatively obtained by solid state reaction of stoichiometric amounts of Cd, Ge, S, and a slight excess of Li2S (graphite crucible in evacuated silica tube, 750 °C, 144 h).

Url:

https://api.istex.fr/document/A6586C7FFE668E3B24F899B8A4DEB1B3906E9A62/fulltext/pdf

DOI: 10.1002/chin.201433006

Affiliations:

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Le document en format XML

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ChemInform Abstract: Li2CdGeS4, a Diamond‐Like Semiconductor with Strong Second‐Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold.

ChemInform Abstract: Li2CdGeS4, a Diamond‐Like Semiconductor with Strong Second‐Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold.

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Abstract

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